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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L-22A
- Infineon Technologies
-
1:
$2.43
-
4,857En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22A
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
4,857En existencias
|
|
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$2.43
|
|
|
$1.56
|
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$1.06
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$0.882
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Ver
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$0.763
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$0.776
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|
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$0.763
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$0.763
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|
Min.: 1
Mult.: 1
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|
Si
|
SMD/SMT
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TDSON-8
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N-Channel
|
2 Channel
|
100 V
|
20 A
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20 mOhms, 20 mOhms
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- 16 V, 16 V
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1.1 V
|
27 nC
|
- 55 C
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+ 175 C
|
60 W
|
Enhancement
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AEC-Q101
|
Reel, Cut Tape, MouseReel
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|
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Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
- IPG20N10S4L22AATMA1
- Infineon Technologies
-
1:
$1.91
-
1,896En existencias
|
N.º de artículo de Mouser
726-20N10S4L22AATMA1
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET_(75V 120V(
|
|
1,896En existencias
|
|
|
$1.91
|
|
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$1.23
|
|
|
$0.977
|
|
|
$0.835
|
|
|
$0.817
|
|
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$0.763
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q101
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L22ATMA1
- Infineon Technologies
-
1:
$2.54
-
3,054En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L22ATM
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
3,054En existencias
|
|
|
$2.54
|
|
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$1.54
|
|
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$1.10
|
|
|
$0.902
|
|
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$0.80
|
|
|
$0.747
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|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
Reel, Cut Tape, MouseReel
|
|
|
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
- IPG20N10S4L-22
- Infineon Technologies
-
1:
$2.38
-
6,249En existencias
|
N.º de artículo de Mouser
726-IPG20N10S4L-22
|
Infineon Technologies
|
Transistor metal-óxido-semiconductor de efecto de campo (MOSFET) MOSFET
|
|
6,249En existencias
|
|
|
$2.38
|
|
|
$1.52
|
|
|
$1.04
|
|
|
$0.862
|
|
|
$0.799
|
|
|
$0.747
|
|
Min.: 1
Mult.: 1
|
|
|
Si
|
SMD/SMT
|
TDSON-8
|
N-Channel
|
2 Channel
|
100 V
|
20 A
|
20 mOhms, 20 mOhms
|
- 16 V, 16 V
|
1.1 V
|
27 nC
|
- 55 C
|
+ 175 C
|
60 W
|
Enhancement
|
AEC-Q100
|
Reel, Cut Tape, MouseReel
|
|
