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Vishay Integrated MOSFETs with Common Drain

Vishay Integrated MOSFETs with Common Drain are 1, 2, and 3-channels offering surface mounting. The Integrated MOSFETs feature N-channel, and N+P-channel options, as well as a breakdown voltage range of 20V to 200V. The Enhancement Mode MOSFETs have 6 or 8-pins, a power dissipation range of 1.5W to 69.4W, and on drain-source resistance of 2.15mΩ to 26mΩ.

Features

  • -55°C to +150°C operating temperature range
  • SMD mounting
  • 1 to 3 channels
  • N-channel, N-channel and P-channel transistor types
  • 20V to 200V drain-source breakdown voltage
  • -16V to 20V gate-source voltage
  • 2.15mΩ to 26mΩ Rds on drain-source resistance
  • 8.5A to 60A continuous drain current
  • 12us to 510ns fall time
  • 3.5µs to 330ns rise time
  • 1.5W to 69.4W Pd power dissipation
  • Enhancement mode
  • AEC-Q101 qualified

Associated Products

Vishay Integrated MOSFET Solutions

Single- and multi-die MOSFETs with integrated features, such as Schottky diodes and ESD protection

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Vishay PowerPAIR® Dual-MOSFETs

Co-packaged MOSFETs designed to reduce space and increase performance over separate discretes.

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Publicado: 2019-05-14 | Actualizado: 2024-10-24