Vishay Semiconductors High-Power, High-Speed Infrared Emitters

Vishay VSMB294x/VSMY2853 High-Speed, High-Power Infrared Emitters consist of an adapted lens radius to provide wide ±25° and ±28° angles of half intensity. The resulting typical radiant intensity ranges from 20mW/sr to 35mW/sr at a 100mA drive current. Saving space over lensed PLCC2 solutions, the IR emitters are available in compact top-view 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing packages, and 2.3mm x 2.55mm x 2.3mm side-view packages. These offer fast switching speeds and low forward voltages, as the Vishay devices feature GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies.

Features

  • Adapted lens radius
  • Wide ±25° and ±28° angles of half intensity
  • 20mW/sr to 35mW/sr typical radiant intensity range at 100mA drive current
  • Fast switching speeds
  • Low forward voltages
  • GaAIAs surface emitter chip (VSMY2853), double hetero (VSMF2893), and multi-quantum well (VSMB2943, VSMB2948) technologies
  • Compact packaging
    • 2.3mm x 2.3mm x 2.5mm gullwing and reverse gullwing
    • 2.3mm x 2.55mm x 2.3mm side view

Infographic

Vishay Semiconductors High-Power, High-Speed Infrared Emitters
Publicado: 2013-04-04 | Actualizado: 2024-09-23